Ion implanted bubble propagation structure
US4070658A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1975 |
| Grant date | Jan 24, 1978 |
| Priority date | — |
| Expiry date | Dec 31, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/24
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved ion implanted propagation structure for movement of magnetic bubble domains in a storage medium which comprises an additional magnetic layer capable of ion implantation in combination with a bubble domain storage layer in which the bubble domains exist and are moved by the ion implanted layer in response to the reorientation of a magnetic field in the plane of the ion implanted layer. The ion implanted layer (drive layer) can be in intimate contact with the storage layer and exchange coupled thereto, or can be separated from the storage layer by a non-magnetic spacer. The ion implanted layer can comprise different geometry propagation elements and its thickness, 4.pi.M, and other magnetic properties are generally selected to provide flux matching of a charged wall in the ion implanted layer with the flux emanating from the bubble domains to be moved. The charged wall is coupled to the bubble domain by exchange coupling and/or magnetostatic coupling. SU PAC BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to propagation structures for moving magnetic bubble domains, and more particularly to improved ion implanted propagation structures for mov…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.