Nitrogen-free anionic and non-ionic surfactants in a process for producing a haze-free semiconduct
US4070797A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1976 |
| Grant date | Jan 31, 1978 |
| Priority date | — |
| Expiry date | Jul 2, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for making haze-free surfaces of semiconductor bodies which comprs a first step of polishing the surface by means of a polishing agent containing at least one member of the group consisting of quartz, silica, silicates and fluosilicates, and a second step of polishing the surface by means of a polishing agent containing in addition to the above defined agents from 0.1 to 10% by weight calculated on the polishing agent of a nitrogen-free surfactant selected from the group consisting of anionic and non-ionic surfactants, and a mixture thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.