Patent · US Expired

Nitrogen-free anionic and non-ionic surfactants in a process for producing a haze-free semiconduct

US4070797A · kind A · utility

8Cited by
11References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 2, 1976
Grant dateJan 31, 1978
Priority date
Expiry dateJul 2, 1996

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/30625
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Process for making haze-free surfaces of semiconductor bodies which comprs a first step of polishing the surface by means of a polishing agent containing at least one member of the group consisting of quartz, silica, silicates and fluosilicates, and a second step of polishing the surface by means of a polishing agent containing in addition to the above defined agents from 0.1 to 10% by weight calculated on the polishing agent of a nitrogen-free surfactant selected from the group consisting of anionic and non-ionic surfactants, and a mixture thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.