Insulated gate type field effect transistors
US4074300A · kind A · utility
28Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1976 |
| Grant date | Feb 14, 1978 |
| Priority date | — |
| Expiry date | Feb 13, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an insulated gate type field effect transistor comprising spaced source and drain regions, an insulating film between the source and drain regions and a gate electrode mounted on the insulating film, an inverted frustum shaped polycrystalline semiconductor layer is formed on the insulating film and the gate electrode is mounted on the polycrystalline semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.