Tetsushi Sakai
10Patents
10h-index
25Co-inventors
72Inventor score
Filing activity: Feb 13, 1976 → Aug 28, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4531282A | Bipolar transistors having vertically arrayed collector-base-emitter with novel polycrystalline base electrode surrounding island emitter and method of making same | Electricity | 54 | Expired |
| US5189504A | Semiconductor device of MOS structure having p-type gate electrode | Emerging Cross-Sectional Technologies | 49 | Expired |
| US4188707A | Semiconductor devices and method of manufacturing the same | Emerging Cross-Sectional Technologies | 40 | Expired |
| US6229165A | Semiconductor device | Electricity | 39 | Expired |
| US4074300A | Insulated gate type field effect transistors | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5989981A | Method of manufacturing SOI substrate | Electricity | 25 | Expired |
| US4780427A | Bipolar transistor and method of manufacturing the same | Electricity | 19 | Expired |
| US4379001A | Method of making semiconductor devices | Electricity | 18 | Expired |
| US4920401A | Bipolar transistors | Electricity | 15 | Expired |
| US4128845A | Semiconductor integrated circuit devices having inverted frustum-shape contact layers | Electricity | 14 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.