Method for the epitaxial growth of III-V compounds at homogeneous low temperature utilizing a single flat temperature zone
US4086109A · kind A · utility
3Cited by
3References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 4, 1977 |
| Grant date | Apr 25, 1978 |
| Priority date | — |
| Expiry date | Mar 4, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for the epitaxial growth from the gaseous phase of III-V-compounds at homogeneous and low temperature by varying the atmosphere specifically, by utilizing a neutral gas in the initial transport reaction and subsequently introducing hydrogen into the gaseous mixture in the immediate vicinity of the substrate. The temperature in the epitaxial space is homogeneous and low (600.degree. C) and the qualities of the deposited layers are considerably improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.