Static induction type thyristor
US4086611A · kind A · utility
13Cited by
2References
17Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 19, 1976 |
| Grant date | Apr 25, 1978 |
| Priority date | — |
| Expiry date | Oct 19, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/088
Abstract
The disclosed thyristor comprises an n.sup.- semi-conductor layer, a p.sup.- semiconductor layer disposed on one surface of the n.sup.- layer to form a pn junction between them, an n.sup.+ and a p.sup.+ semiconductor layer disposed on the other surfaces of the n.sup.- and p.sup.- layers respectively to serve as main electrodes and a p.sup.+ and a n.sup.+ apertured gate layers disposed within the n.sup.- and p.sup.- layers respectively and provided with a gate electrode. An intrinsic semiconductor layer may be substituted for the n.sup.- and p.sup.- layers. A process of producing such a thyristor is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.