Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy
US4089713A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 6, 1977 |
| Grant date | May 16, 1978 |
| Priority date | — |
| Expiry date | Jan 6, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/388
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of adjusting donor concentration in a body of mercury cadmium telluride comprising the steps of contacting the mercury cadmium telluride with a quantity of donor material selected from the group consisting of gallium and gallium alloys containing up to 3% of aluminum, tin or cadmium and heating the body at a temperature of at least 200.degree. C for a sufficient time to diffuse the donor material within the body. The donor material is placed in contact with the body of mercury cadmium telluride by immersing the body in a molten quantity of the donor material to wet the surface thereof. Further included is the step of removing any undistributed donor material after heating. Also disclosed is a method of adjusting the donor concentration in the first region of mercury cadmium telluride with respect to a second adjacent region by practicing the process of this invention on the first region only. Since donor materials tend to increase the N-type concentration, a PN junction can be formed from P-type material and an N N+ junction may be formed from N-type material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.