Doping mercury cadmium telluride with aluminum or silicon
US4089714A · kind A · utility
8Cited by
9References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 1977 |
| Grant date | May 16, 1978 |
| Priority date | — |
| Expiry date | Jan 6, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a temperature of at least 550.degree. C for sufficient time to diffuse the donor material into the body. In a preferred embodiment, the heating is done in the presence of a source of mercury vapor pressure other than the body of semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.