Etching apparatus using a plasma
US4094722A · kind A · utility
35Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1977 |
| Grant date | Jun 13, 1978 |
| Priority date | — |
| Expiry date | Jan 26, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/18
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An etching device uses a gas activated by a plasma for etching a semiconductor element. The apparatus includes object feeding and etching chambers formed on the opposite sides of an airtight flat chamber and a support plate rotatably mounted in the flat chamber to bring the semiconductor element from the feeding chamber to the etching chamber in which the semiconductor element is etched by the vertically flowing activated gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.