Ion implanted Schottky barrier diode
US4096622A · kind A · utility
23Cited by
1References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 14, 1977 |
| Grant date | Jun 27, 1978 |
| Priority date | — |
| Expiry date | Jan 14, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky barrier diode having a subsurface metalsemiconductor rectifying barrier with electrical rectification properties immune to semiconductor surface contamination. A special ion implantation technique is used to produce a very thin but strongly metallic island-like region in a semiconductive body. A Schottky barrier separates the region from the semiconductive body below the semiconductor body surface. A special truncated Gaussian profile in metal concentration through the thickness of the region provides low thermal and electrical resistance between the Schottky barrier and the region surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.