Bernard A. MacIver
16Patents
13h-index
5Co-inventors
67Inventor score
Filing activity: Jan 14, 1977 → Dec 27, 1988
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4786952A | High voltage depletion mode MOS power field effect transistor | Electricity | 118 | Expired |
| US4893509A | Method and product for fabricating a resonant-bridge microaccelerometer | Physics | 114 | Expired |
| US4554208A | Metal bearing surface having an adherent score-resistant coating | Emerging Cross-Sectional Technologies | 108 | Expired |
| US4746960A | Vertical depletion-mode j-MOSFET | Electricity | 67 | Expired |
| US4769685A | Recessed-gate junction-MOS field effect transistor | Electricity | 42 | Expired |
| US4652334A | Method for patterning silicon dioxide with high resolution in three dimensions | Electricity | 35 | Expired |
| US4144100A | Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon | Electricity | 24 | Expired |
| US4410611A | Hard and adherent layers from organic resin coatings | Emerging Cross-Sectional Technologies | 24 | Expired |
| US4611220A | Junction-MOS power field effect transistor | Electricity | 24 | Expired |
| US4096622A | Ion implanted Schottky barrier diode | Emerging Cross-Sectional Technologies | 23 | Expired |
| US4133704A | Method of forming diodes by amorphous implantations and concurrent annealing, monocrystalline reconversion and oxide passivation in <100> N-type silicon | Electricity | 18 | Expired |
| US4618505A | Method of making adherent score-resistant coating for metals | Performing Operations; Transporting | 17 | Expired |
| US4321317A | High resolution lithography system for microelectronic fabrication | Emerging Cross-Sectional Technologies | 13 | Expired |
| US4133701A | Selective enhancement of phosphorus diffusion by implanting halogen ions | Emerging Cross-Sectional Technologies | 13 | Expired |
| US4800170A | Process for forming in a silicon oxide layer a portion with vertical side walls | Electricity | 10 | Expired |
| US4811063A | JMOS transistor utilizing polysilicon sinks | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.