Gaseous atmosphere control apparatus for a semiconductor manufacturing system
US4096822A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1976 |
| Grant date | Jun 27, 1978 |
| Priority date | — |
| Expiry date | Sep 29, 1996 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45578
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gaseous atmosphere control apparatus for heat-treating semiconductors in a uniform gaseous atmosphere condition is disclosed. The control apparatus is provided with a reaction pipe through which semiconductor wafers are transferred to be heat-treated. A gas distribution pipe is fixed to the inside wall of the reaction pipe for guiding the transfer of the wafers and supplying heat-treating gas in the reaction pipe. The distribution pipe is provided with a plurality of blow-off holes, the diameter thereof being made wider as the pipe extends longitudinally, to thereby control the gaseous atmosphere condition in the reaction pipe to be uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.