Method of making zener diodes with selectively variable breakdown voltages
US4099998A · kind A · utility
21Cited by
8References
4Claims
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Key dates
| Filing date | Aug 20, 1976 |
| Grant date | Jul 11, 1978 |
| Priority date | — |
| Expiry date | Aug 20, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
Zener diodes of selectively variable breakdown voltages ranging from a few voltages to several hundred volts are fabricated in monolithic integrated circuits by locating the edge of a P-N junction at the surface of a substrate within the gradient region of P-type diffusion. Methods for making the same are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.