Plasma etching apparatus
US4101411A · kind A · utility
26Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1977 |
| Grant date | Jul 18, 1978 |
| Priority date | — |
| Expiry date | Apr 15, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32238
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an apparatus wherein a microwave discharge is caused by introducing a discharge gas into a discharge area to which a microwave electric field is supplied by a microwave coupler and to which an external magnetic field is supplied by a magnetic field generator, whereby the surface of a substrate is etched by using ions in a generated plasma, a plasma etching apparatus is characterized by employing a round waveguide as the microwave coupler, the discharge area being formed within the round waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.