Doping of (Hg,Cd)Te with a Group VA element
US4105477A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1977 |
| Grant date | Aug 8, 1978 |
| Priority date | — |
| Expiry date | Oct 31, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Mercury cadmium telluride having a quantity of an acceptor material selected from Group VA of the Periodic Table, consisting of nitrogen, phosphorus, arsenic and antimony and bismuth dispersed therein, preferably in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Most preferred are phosphorus, arsenic and antimony. Also disclosed are junctions formed by two adjacent regions of mercury cadmium telluride in which one of the regions contains an acceptor concentration increasing amount of nitrogen phosphorus, arsenic, bismuth or antimony. A method is disclosed which permits diffusion of these additives into a body of already formed mercury cadmium telluride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.