Doping HgCdTe with Li
US4105478A · kind A · utility
12Cited by
2References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 3, 1978 |
| Grant date | Aug 8, 1978 |
| Priority date | — |
| Expiry date | Feb 3, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury cadmium telluride include diffusion of a quantity of lithium into an already existing body of mercury cadmium telluride. Formation of NP junctions and P-P+ regions are disclosed using the compositions and methods of the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.