Process for the production of fine structures consisting of a vapor-deposited material on a base

US4108717A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Dietrich Widmann · Unterhaching, DE

Key dates

• Filing date: Jul 8, 1975
• Grant date: Aug 22, 1978
• Expiry date: Jul 8, 1995

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/143
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for producing fine structures having an order of magnitude of 1 .mu.m without a loss of dimension relative to a mask on a base such as a semiconductor device having electrode structures characterized by providing a base having a surface which is either etchable or is provided with an auxiliary etchable layer, providing a mask on the surface, which mask has openings corresponding to the fine structure of material to be applied on the surface, providing an etching agent which attacks the surfaces of the base without attacking the mask, etching the uncovered portions of the base until an under-etching of predetermined width exists beneath the edges of the mask, depositing the layer of material on the entire surface, controlling the amount of depositing so the layer of material being deposited on the mask and on the etched surfaces of the base are not in contact with each other, and subsequently removing the mask with the layer of material deposited thereon. If an auxiliary layer is on the surface it may be subsequently removed by etching without substantially etching the deposited fine structure or it may be retained to provide closely spaced electrode patterns. If the auxil…