Triode sputtering system
US4111783A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1977 |
| Grant date | Sep 5, 1978 |
| Priority date | — |
| Expiry date | Nov 8, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3478
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A triode sputtering system comprises a plasma confining enclosure including a cathode at one end, an anode at the other, and a central plasma supporting portion. Contamination caused by unwanted sputtering of the surfaces of the confining apparatus is substantially eliminated by making the confining enclosure in several, typically four, electrically isolated portions, namely, the cathode support portion, the anode support portion and a pair of plasma support portions. In the structure described there is avoided the relatively large potential difference between the confinement enclosure and the plasma, which occurs predominantly at the anode support end of the confining enclosure of prior art one-piece apparatus. This portion of the apparatus has been found to be the major source of unwanted sputtering therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.