Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50.degree. C
US4112458A · kind A · utility
5Cited by
11References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 26, 1976 |
| Grant date | Sep 5, 1978 |
| Priority date | — |
| Expiry date | Jan 26, 1996 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Thermally sensitive silicon thyristors capable of intrinsically switching between high and low resistance states in response to a predetermined temperature in the range -30.degree. C to +150.degree. C; this intrinsic switching temperature being not only lower than heretofore achieved but also predictably determinable. The two terminal breakover voltage is nominally equal to one-half Vmax at a temperature less than 50.degree. C, where Vmax is the maximum value of the two terminal breakover voltage of the thyristor with respect to temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.