Robert W. Lade
40Patents
15h-index
11Co-inventors
74Inventor score
Filing activity: Feb 18, 1975 → May 8, 1989
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4541001A | Bidirectional power FET with substrate-referenced shield | Electricity | 42 | Expired |
| US4546367A | Lateral bidirectional notch FET with extended gate insulator | Electricity | 35 | Expired |
| US4295058A | Radiant energy activated semiconductor switch | Emerging Cross-Sectional Technologies | 29 | Expired |
| US4612465A | Lateral bidirectional notch FET with gates at non-common potentials | Electricity | 24 | Expired |
| US4574209A | Split gate EFET and circuitry | Emerging Cross-Sectional Technologies | 24 | Expired |
| US4574208A | Raised split gate EFET and circuitry | Emerging Cross-Sectional Technologies | 23 | Expired |
| US3971056A | Semiconductor temperature switches | Electricity | 23 | Expired |
| US4936143A | Cylinders having piston position measurement | Physics | 22 | Expired |
| US4553151A | Bidirectional power FET with field shaping | Electricity | 21 | Expired |
| US4577052A | AC Solar cell | Emerging Cross-Sectional Technologies | 18 | Expired |
| US4050083A | Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version | Electricity | 17 | Expired |
| US4323793A | Thyristor having widened region of temperature sensitivity with respect to breakover voltage | Electricity | 17 | Expired |
| US4542396A | Trapped charge bidirectional power FET | Electricity | 17 | Expired |
| US4622568A | Planar field-shaped bidirectional power FET | Electricity | 16 | Expired |
| US4622569A | Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means | Electricity | 15 | Expired |
| US4670764A | Multi-channel power JFET with buried field shaping regions | Electricity | 14 | Expired |
| US4571513A | Lateral bidirectional dual notch shielded FET | Electricity | 13 | Expired |
| US4574207A | Lateral bidirectional dual notch FET with non-planar main electrodes | Electricity | 13 | Expired |
| US4571606A | High density, high voltage power FET | Electricity | 13 | Expired |
| US4571512A | Lateral bidirectional shielded notch FET | Electricity | 13 | Expired |
| US4533783A | AC solar cell with alternately generated pn junctions | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4577208A | Bidirectional power FET with integral avalanche protection | Electricity | 11 | Expired |
| US4949584A | Apparatus for measuring depth of a fluid chamber | Physics | 8 | Expired |
| US4119845A | Thermally-sensitive, photo-controlled semiconductor switching systems | Electricity | 8 | Expired |
| US4529998A | Amplified gate thyristor with non-latching amplified control transistors across base layers | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.