Patent · US Expired

Process for producing large-size substrate-based semiconductor material utilizing vapor-phase deposition and subsequent resolidification

US4113532A · kind A · utility

12Cited by

10References

10Claims

0Family size

Assignee

Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

Bernhard Authier · Burghausen, DE
Rudolf Griesshammer · Altötting, DE
Franz Koppl · Altötting, DE
Winfried Lang · Burghausen, DE
Erhard Sirtl · Marktl, DE
Heinz-Jorg Rath · Burghausen, DE

Key dates

Filing date	Nov 1, 1976
Grant date	Sep 12, 1978
Priority date	—
Expiry date	Nov 1, 1996

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/907
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for producing large-size, substrate-based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 .mu.m has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward. Large-sized plates obtained by cutting up the semiconductor material are used as solar cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.