Floating gate storage device and method of fabrication
US4114255A · kind A · utility
31Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 1977 |
| Grant date | Sep 19, 1978 |
| Priority date | — |
| Expiry date | May 2, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/221
Abstract
A floating gate storage device in which the channel is maintained at a first doping concentration to provide a low threshold voltage and preselected portions or regions along the sides of the channel are maintained at a second higher doping concentration to enhance programming of the device. These regions are formed as part of the "front-end" processing of the substrate while forming channel stops, thus no additional processing is required.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.