George Perlegos
16Patents
13h-index
11Co-inventors
67Inventor score
Filing activity: Feb 3, 1975 → Oct 28, 1983
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4203158A | Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same | Electricity | 249 | Expired |
| US4223394A | Sensing amplifier for floating gate memory devices | Physics | 71 | Expired |
| US4546454A | Non-volatile memory cell fuse element | Electricity | 46 | Expired |
| US4266283A | Electrically alterable read-mostly memory | Physics | 37 | Expired |
| US4538245A | Enabling circuit for redundant word lines in a semiconductor memory array | Physics | 31 | Expired |
| US4114255A | Floating gate storage device and method of fabrication | Electricity | 31 | Expired |
| US4558344A | Electrically-programmable and electrically-erasable MOS memory device | Physics | 30 | Expired |
| US4094012A | Electrically programmable MOS read-only memory with isolated decoders | Physics | 29 | Expired |
| US4519849A | Method of making EPROM cell with reduced programming voltage | Electricity | 27 | Expired |
| US3938108A | Erasable programmable read-only memory | Electricity | 24 | Expired |
| US4535259A | Sense amplifier for use with a semiconductor memory array | Physics | 21 | Expired |
| US4103189A | MOS Buffer circuit | Physics | 17 | Expired |
| US4264828A | MOS Static decoding circuit | Electricity | 15 | Expired |
| US4768169A | Fault-tolerant memory array | Physics | 12 | Expired |
| US4412310A | EPROM Cell with reduced programming voltage and method of fabrication | Electricity | 10 | Expired |
| US4489401A | Electrical partitioning scheme for improving yields during the manufacture of semiconductor memory arrays | Physics | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.