Patent · US Expired

Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction

US4119441A · kind A · utility

6Cited by

2References

9Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Ernst Haas · Buckenhof, DE
Karl Platzoeder · Unterschleißheim, DE
Manfred Schnoeller · Unterschleißheim, DE

Key dates

Filing date	Oct 12, 1976
Grant date	Oct 10, 1978
Priority date	—
Expiry date	Oct 12, 1996

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/165
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method is disclosed for the production of n-doped silicon single crystals, each having a dish-shaped specific electrical resistance profile in a radial direction about a central axis of the crystal. A silicon single crystal is exposed to a pattern of radiation with neutrons according to the reaction 30.sub.Si (n,.gamma.) 31.sub.Si .sup..beta.-.fwdarw. 31.sub.P. The neutron radiation causes a weaker doping concentration in marginal regions of the crystals due to the production of fewer phosphorus atoms. Either p-conductive silicon crystals or n-conductive silicon crystals may be utilized as an initial material for exposure to the neutron radiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.