Semiconductor device having a discharge-formed insulating film
US4121240A · kind A · utility
15Cited by
7References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 26, 1976 |
| Grant date | Oct 17, 1978 |
| Priority date | — |
| Expiry date | Mar 26, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor chip including a conductive layer thereon, a film of Si disposed on the surface of the chip, and an insulating film of SiO.sub.2 disposed on said Si film, which is formed by a sputtering or a glow discharge method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.