Inventor · Hinode, JP

Hisao Katto

19Patents
12h-index
27Co-inventors
78Inventor score

Filing activity: Mar 26, 1976 → Apr 27, 1995

Most-cited inventions

PatentTitleAreaCited byStatus
US4317055A High-voltage circuit for insulated gate field-effect transistor Electricity 108 Expired
US4652897A Semiconductor memory device Electricity 86 Expired
US4717684A Semiconductor integrated circuit device Electricity 33 Expired
US5610089A Method of fabrication of semiconductor integrated circuit device Electricity 26 Expired
US5276346A Semiconductor integrated circuit device having protective/output elements and internal circuits Electricity 22 Expired
US4295265A Method for producing a nonvolatile semiconductor memory Electricity 20 Expired
US4377819A Semiconductor device Electricity 18 Expired
US4731642A Semiconductor memory device with means to prevent word line breakage Emerging Cross-Sectional Technologies 17 Expired
US5416347A Semiconductor memory device with additional conductive line to prevent line breakage Emerging Cross-Sectional Technologies 17 Expired
US4818716A Semiconductor device and manufacturing method thereof Electricity 17 Expired
US4121240A Semiconductor device having a discharge-formed insulating film Electricity 15 Expired
US5534723A Semiconductor integrated circuit device having output and internal circuit MISFETS Electricity 14 Expired
US4904615A Method of making a read only memory device Electricity 11 Expired
US5286666A Method of producing semiconductor memory device Emerging Cross-Sectional Technologies 9 Expired
US5116775A Method of producing semiconductor memory device with buried barrier layer Emerging Cross-Sectional Technologies 6 Expired
US4830977A Method of making a semiconductor memory device Emerging Cross-Sectional Technologies 6 Expired
US5436484A Semiconductor integrated circuit device having input protective elements and internal circuits Electricity 6 Expired
US5436483A Semiconductor integrated circuit device having a first MISFET of an output buffer circuit and a second MISFET of an internal circuit Electricity 5 Expired
US5580810A Method of making a semiconductor memory device Emerging Cross-Sectional Technologies 3 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.