Controlled reflectance of sputtered aluminum layers
US4125446A · kind A · utility
30Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1977 |
| Grant date | Nov 14, 1978 |
| Priority date | — |
| Expiry date | Aug 15, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/40
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for depositing aluminum layers having a predetermined reflectance or a predetermined resistivity is disclosed. The layers are deposited by sputtering a target comprising 90% or greater aluminum. The parameters which must be controlled include the partial pressure of reactive gases, such as nitrogen, hydrogen, oxygen and water vapor, which are minor constituents of the sputtering gas, the total sputtering gas pressure, the substrate temperature, and the deposition rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.