Determination of thermal conductances of bonding layers in infrared photoconductor arrays
US4126033A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1977 |
| Grant date | Nov 21, 1978 |
| Priority date | — |
| Expiry date | Jun 23, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for determining in situ the thermal conductances of bonding layers of detectors in infrared detector arrays for quality selection of preferred detector arrays. Each detector of the array is heated successively by laser pulses of variable pulse width and the thermally-induced change in detector resistance is measured as a function of time after each laser pulse and converted directly to its corresponding temperature. Using measured values of detector resistance as a function of temperature for each detector, one can obtain the time-dependence of the detector temperature following each laser pulse for each detector of the array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.