Sapphire single crystal substrate for semiconductor devices
US4126731A · kind A · utility
18Cited by
12References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 24, 1975 |
| Grant date | Nov 21, 1978 |
| Priority date | — |
| Expiry date | Oct 24, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminium oxide) and at least one additive selected from a group consisting of oxides of gallium, titanium, scandium, and others. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.