Germanium-containing silicon nitride film
US4126880A · kind A · utility
5Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1977 |
| Grant date | Nov 21, 1978 |
| Priority date | — |
| Expiry date | Jan 4, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A germanium-containing silicon nitride film has a germanium content of 0.5 to 10 atomic-% that of the silicon content. Since the film has a much smaller stress than a conventional silicon nitride (Si.sub.3 N.sub.4) film, it is very suitable as a mask for fabricating a semiconductor device and an insulating or a protective film for a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.