Seiichi Isomae
6Patents
5h-index
22Co-inventors
63Inventor score
Filing activity: Jan 4, 1977 → Apr 18, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4768076A | Recrystallized CMOS with different crystal planes | Electricity | 111 | Expired |
| US6198157A | Semiconductor device having buried boron and carbon regions | Emerging Cross-Sectional Technologies | 101 | Expired |
| US6226079A | Defect assessing apparatus and method, and semiconductor manufacturing method | Physics | 15 | Expired |
| US6635950B1 | Semiconductor device having buried boron and carbon regions, and method of manufacture thereof | Emerging Cross-Sectional Technologies | 8 | Expired |
| US4126880A | Germanium-containing silicon nitride film | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7189278B2 | Method and apparatus for producing semiconductor or metal particles | Performing Operations; Transporting | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.