Semiconductor integrated circuit devices having inverted frustum-shape contact layers
US4128845A · kind A · utility
14Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 19, 1976 |
| Grant date | Dec 5, 1978 |
| Priority date | — |
| Expiry date | Jul 19, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Inverted frustum shaped polycrystalline semiconductor layers are formed on the emitter and collector regions provided on one surface of a semiconductor substrate, and conductor layers are applied on the upper surfaces of the polycrystalline semiconductor surfaces to form emitter and collector electrodes thus providing a bipolar transistor for the integrated circuit device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.