Method of forming diodes by amorphous implantations and concurrent annealing, monocrystalline reconversion and oxide passivation in <100> N-type silicon
US4133704A · kind A · utility
18Cited by
1References
4Claims
0Family size
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Key dates
| Filing date | Jan 17, 1977 |
| Grant date | Jan 9, 1979 |
| Priority date | — |
| Expiry date | Jan 17, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Boron implantation regions in <100> N-type silicon are subjected to a severe damage implant before anneal in a strongly oxidizing atmosphere that provides a passivating silicon dioxide surface layer. Diodes are formed having leakages as low as when such regions are annealed in other atmospheres or are formed in <111> silicon. In a preferred example, BF.sub.2.sup.+ is used to simultaneously implant boron into a region and convert it to amorphous silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.