Method of coating semiconductor substrates
US4142004A · kind A · utility
82Cited by
8References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1976 |
| Grant date | Feb 27, 1979 |
| Priority date | — |
| Expiry date | Jan 22, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A low-temperature, high-pressure, medium-power process, which utilizes a radio frequency powered radial flow reactor, utilizes only silane and ammonia as the reactant gases for deposition. The methods disclosed result in the deposition on semiconductor wafers of moderately high density silicon-nitrogen films which have low tensile stress and good crack resistance. In addition, these films provide good step coverage, good scratch resistance, and an inert barrier to sodium and moisture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.