Method for determining conduction-band edge and electron affinity in semiconductors
US4142145A · kind A · utility
1Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1977 |
| Grant date | Feb 27, 1979 |
| Priority date | — |
| Expiry date | Dec 22, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2653
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method which utilizes low-energy electron reflections to determine the ctron affinity and to simultaneously locate the position of the conduction-band edge with respect to the Fermi level at the surface of a single-crystal semiconductor. A beam of very-low-energy electrons (<10eV) is directed onto the surface of the semiconductor and the reflection pattern (beam energy v. current collected by the semiconductor) is analyzed using a kinematical approximation for the interference phenomena.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.