Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon
US4144100A · kind A · utility
24Cited by
4References
6Claims
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Key dates
| Filing date | Dec 2, 1977 |
| Grant date | Mar 13, 1979 |
| Priority date | — |
| Expiry date | Dec 2, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low dosage phosphorus implantation regions in <100> P-type silicon are subjected to a severe damage implant with halogen or silicon ions, preferably fluorine and chlorine. This permits anneal in a strongly oxidizing atmosphere for PN junction passivation, without concurrently inducing PN junction leakage. Oxide passivated PN junctions are formed having leakages as low as when the low dose phosphorus implants are annealed in other atmospheres, or are formed in <111> silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.