Vapor deposition of single crystal gallium nitride
US4144116A · kind A · utility
69Cited by
7References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1976 |
| Grant date | Mar 13, 1979 |
| Priority date | — |
| Expiry date | Mar 17, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Method of manufacturing gallium nitride crystals by reaction of galium halide and ammonia in which free hydrogen chloride is introduced into the reaction and deposition zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.