Investigation of near-surface electronic properties in semiconductors by electron beam scanning
US4144488A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1977 |
| Grant date | Mar 13, 1979 |
| Priority date | — |
| Expiry date | Dec 22, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2653
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electron-beam scanning system for investigating the nonuniformity of (1) he work function, (2) the position of the conduction-band edge with respect to the Fermi level, and (3) the electron affinity at the surface of a single-crystal semiconductor. A small-diameter, low-energy electron beam is scanned over the surface to be investigated. The current collected by the surface for electron energies in the retarding-field region is related to the work function of the surface, whereas the current collected by the surface for electron energies in the accelerating-field region is related to the position of the conduction-band edge. The electron affinity is related to the combination of these relationships. Variations in the current collected by the surface for appropriately selected electron energies are used to provide a visual display of variations in these quantities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.