Apparatus for thermal diffusion by high frequency induction heating of semiconductor substrates
US4147432A · kind A · utility
8Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1976 |
| Grant date | Apr 3, 1979 |
| Priority date | — |
| Expiry date | Nov 22, 1996 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to an apparatus for thermal diffusion by means of high frequency induction heating suitable for mass production of semiconductor substrates of uniform quality; wherein a plurality of heating bases, each made of a material having good electric conductivity, and carrying semiconductor substrates, are continuously fed through a furnace tube where the bases are heated by means of high frequency wave excitation in order that each semiconductor substrate receives substantially the same thermal treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.