Monolithic semiconductor integrated circuit ferroelectric memory device
US4149302A · kind A · utility
43Cited by
10References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 8, 1978 |
| Grant date | Apr 17, 1979 |
| Priority date | — |
| Expiry date | Jun 8, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49146
Abstract
An improved monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing the same. It was found that the preferred ferroelectric material, namely Phase III potassium nitrate, is extremely sensitive to moisture requiring unique processing steps to fabricate the structure. The process of manfacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.