Apparatus for the treatment of wafer materials by plasma reaction
US4149923A · kind A · utility
23Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1978 |
| Grant date | Apr 17, 1979 |
| Priority date | — |
| Expiry date | Jun 16, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An automatic apparatus for the treatment of wafer materials by plasma reaction is proposed in which the wafers are sent into the plasma reaction chamber one by one and yet the atmospheric air is never introduced into the reaction chamber between the successive reaction steps for two wafers by use of two rotary vacuum valves which also serve as wafer transmitters into and out of the reaction chamber and a rotary wafer table inside the reaction chamber, all being installed on an inclined base table to effect the downward spontaneous movement of the wafer under treatment by gravity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.