Continuous gas plasma etching apparatus
US4151034A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1977 |
| Grant date | Apr 24, 1979 |
| Priority date | — |
| Expiry date | Dec 19, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A continuous gas plasma etching apparatus comprising a reaction chamber having an inlet means and an outlet means, an activation portion disposed at a distance from said reaction chamber, a distributor means for uniformly supplying said reaction chamber with an activated gas produced in said activation proton, an exhaust means for exhausting the gas inside said reaction chamber from a plurality of gas outlets, a conveyer means disposed inside said reaction chamber to transfer workpieces from the inlet means side to the outlet means side in said reaction chamber, a feeding chamber disposed on the inlet means side of said reaction chamber to contain the workpieces, a workpiece feeding means for feeding the workpieces in said feeding chamber from said inlet means to said conveyer means, a first shutter means for opening and shutting said inlet means, a receiving chamber disposed on the outlet means side of said reaction chamber to receive the workpieces treated with said activated gas in said reaction chamber, a treated workpiece delivering means for introducing the treated workpieces in said reaction chamber into said receiving chamber through said outlet means, and a second shutter …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.