X-ray lithography mask and method for manufacturing the same
US4152601A · kind A · utility
13Cited by
4References
16Claims
0Family size
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Key dates
| Filing date | Oct 19, 1977 |
| Grant date | May 1, 1979 |
| Priority date | — |
| Expiry date | Oct 19, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An x-ray lithography mask including a thick silicon peripheral rib with a window formed therein and a multi-layered membrane transparent to x-rays and visible light supported by the rib and covering the window. The membrane consists essentially of at least two silicon nitride layers and at least one silicon oxide layer sandwiched between the silicon nitride layers. The silicon nitride layers are preferably positioned at opposite surfaces of the multi-layered membrane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.