Semiconductor apparatus
US4152714A · kind A · utility
36Cited by
2References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1978 |
| Grant date | May 1, 1979 |
| Priority date | — |
| Expiry date | Jan 16, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
Abstract
A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.