James M. Daughton
50Patents
22h-index
24Co-inventors
88Inventor score
Filing activity: Sep 29, 1976 → Mar 4, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6744086B2 | Current switched magnetoresistive memory cell | Electricity | 192 | Expired |
| US6777730B2 | Antiparallel magnetoresistive memory cells | Electricity | 141 | Expired |
| US6713195B2 | Magnetic devices using nanocomposite materials | Emerging Cross-Sectional Technologies | 126 | Expired |
| US4780848A | Magnetoresistive memory with multi-layer storage cells having layers of limited thickness | Physics | 120 | Expired |
| US4731757A | Magnetoresistive memory including thin film storage cells having tapered ends | Physics | 80 | Expired |
| US6429640B1 | GMR high current, wide dynamic range sensor | Physics | 75 | Expired |
| US5617071A | Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses | Physics | 65 | Expired |
| US5251170A | Offset magnetoresistive memory structures | Electricity | 62 | Expired |
| US6300617A | Magnetic digital signal coupler having selected/reversal directions of magnetization | Electricity | 60 | Expired |
| US6404191B2 | Read heads in planar monolithic integrated circuit chips | Physics | 53 | Expired |
| US4751677A | Differential arrangement magnetic memory cell | Physics | 53 | Expired |
| US6462541B1 | Uniform sense condition magnetic field sensor using differential magnetoresistance | Performing Operations; Transporting | 50 | Expired |
| US5424236A | Method for forming offset magnetoresistive memory structures | Electricity | 48 | Expired |
| US6963098B2 | Thermally operated switch control memory cell | Electricity | 47 | Expired |
| US6021065A | Spin dependent tunneling memory | Electricity | 46 | Expired |
| US6538921B2 | Circuit selection of magnetic memory cells and related cell structures | Physics | 45 | Expired |
| US5569544A | Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components | Emerging Cross-Sectional Technologies | 42 | Expired |
| US5595830A | Magnetoresistive structure with alloy layer having two substantially immiscible components | Emerging Cross-Sectional Technologies | 40 | Expired |
| US4152714A | Semiconductor apparatus | Electricity | 36 | Expired |
| US6535416B1 | Magnetic memory coincident thermal pulse data storage | Electricity | 34 | Expired |
| US6072382A | Spin dependent tunneling sensor | Physics | 27 | Expired |
| US4918655A | Magnetic device integrated circuit interconnection system | Emerging Cross-Sectional Technologies | 23 | Expired |
| US7437309B2 | Talent management system and methods for reviewing and qualifying a workforce utilizing categorized and free-form text data | Physics | 21 | Expired |
| US6872467B2 | Magnetic field sensor with augmented magnetoresistive sensing layer | Emerging Cross-Sectional Technologies | 20 | Expired |
| US4582975A | Circuit chip | Electricity | 19 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.