Patent · US Expired

Process for the deposition of polycrystalline silicon from the gas phase on heated carriers

US4160797A · kind A · utility

5Cited by

5References

7Claims

0Family size

Assignee

Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

Alois Goppinger
Rudolf Griesshammer · Altötting, DE
Helmut Hamster · Burghausen, DE
Franz Koppl · Altötting, DE

Key dates

Filing date	Sep 22, 1976
Grant date	Jul 10, 1979
Priority date	—
Expiry date	Sep 22, 1996

Classification

Technology area (CPC H)Electricity
CPC primaryH02K29/08
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A process for deposition of polycrystalline silicon from the gas phase on ated carrier bodies of carbon, which comprises assembling the carrier bodies from extremely thin flexible graphite foils, heating the bodies to deposition temperature, while contacting them with a gaseous mixture containing a decomposable silicon compound and, if desired, hydrogen, and separating the deposited silicon from the carrier body, after termination of the deposition process, by mechanical means. The polycrystalline silicon can either be deposited in the form of shaped hollow bodies for use as laboratory equipment or in the semiconductor industries, or it may be processed to monocrystalline materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.