Defining a low-density pattern in a photoresist with an electron beam exposure system
US4163155A · kind A · utility
8Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1978 |
| Grant date | Jul 31, 1979 |
| Priority date | — |
| Expiry date | Apr 7, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30488
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
By modifying the raster scanning mode of operation of an electron beam exposure system, it is practicable to directly define low-density features (100-102) in a relatively insensitive positive photoresist (10) that exhibits high resolution and good processing characteristics. As a result, it is feasible to utilize such a system as an adjunct in what is otherwise a photolithographic fabrication process to define certain critical features of a microminiature device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.