Infrared semiconductor device with superlattice region
US4163238A · kind A · utility
27Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1978 |
| Grant date | Jul 31, 1979 |
| Priority date | — |
| Expiry date | Jun 9, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3419
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
It is taught that infrared light can be produced by applying a voltage to a semiconductor device with a superlattice region and, further, that a population inversion can be achieved in such a device so that infrared amplification and oscillation can be produced. Methods of producing infrared radiation and of amplifying infrared radiation utilizing semiconductor devices with superlattice regions are disclosed. Also, semiconductor devices with superlattice regions for use as a laser amplifier or oscillator are taught.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.