Patent · US Expired

Highly integrated semiconductor structure providing a diode-resistor circuit configuration

US4170017A · kind A · utility

4Cited by
7References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 23, 1978
Grant dateOct 2, 1979
Priority date
Expiry dateMar 23, 1998

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/416
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In an integrated circuit an improved highly integrated semiconductor structure for providing a Schottky diode-resistor circuit configuration is disclosed. Although not limited thereto, the improved highly integrated semiconductor structure has particular utility when employed in a monolithic memory.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.