Highly integrated semiconductor structure providing a diode-resistor circuit configuration
US4170017A · kind A · utility
4Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1978 |
| Grant date | Oct 2, 1979 |
| Priority date | — |
| Expiry date | Mar 23, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/416
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In an integrated circuit an improved highly integrated semiconductor structure for providing a Schottky diode-resistor circuit configuration is disclosed. Although not limited thereto, the improved highly integrated semiconductor structure has particular utility when employed in a monolithic memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.