Epitaxial deposition process for producing an electrostatic induction type thyristor
US4171995A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 18, 1977 |
| Grant date | Oct 23, 1979 |
| Priority date | — |
| Expiry date | Jan 18, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/088
Abstract
A process of manufacturing a static induction thyristor comprising providing a semiconductor substrate of the first conductivity type which defines a first semiconductor layer and forming a second semiconductor layer thereon of a second conductivity type. The first and second semiconductor layers have relative impurity concentrations effective for forming therebetween charge depletion regions when no electrical signal is applied to the second semiconductor layer and which prevent injection of charge carriers through the second semiconductor layer when the thyristor is in a blocking state, and such that electrically forward biasing the second semiconductor layer effectuates a sufficient reduction of the depletion regions that a sufficient quantity of charge carriers may be injected through the second semiconductor layer that the thryistor switches to a conductive state. The second semiconductor layer defines the gate region of the thyristor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.